On the enhanced electron mobility in strained-silicon inversion layers

By Massimo V. Fischetti, F. Gámiz, W. Hänsch. 2002

191 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/fcc6c48af1e047ee0c46c587c3f03455e9be0411

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1. C. Machala
2. R. Wise
3. P. Chidambaram
4. C. Bowen
5. S. Chakravarthi

Citations in the corpus

• Fundamentals of silicon material properties for successful exploitation of strain engineering in modern CMOS manufacturing (2006, background): “Much of the theoretical literature on strain-dependent transport is based on an envelope approximation for the Schrodinger equation [116]–[126].”