Modeling of electron mobility in gated silicon nanowires at room temperature: Surface roughness scattering, dielectric screening, and band nonparabolicity
By Seonghoon Jin, Massimo V. Fischetti, Ting-Wei Tang. 2007
312 citations recorded by the source corpus.
Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/a0118c57ab117d3ff1ddefce659e211318a4595e
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In Atomic and Molecular Physics, and Optics
In Electrical and Electronic Engineering
Citations in the corpus
- Considerations for Ultimate CMOS Scaling (2012, background): “nanowires [78], [79] suggest flat or improved mobility down to”