On experimental determination of carrier velocity in deeply scaled NMOS: how close to the thermal limit?

By Anthony Lochtefeld, D. Antoniadis. IEEE Electron Device Letters, 2001

170 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/bc19bbb64fa9a39f702398a6d61ce86bce337834

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In Electrical and Electronic Engineering

Citations in the corpus

A compact scattering model for the nanoscale double-gate MOSFET (2002, background): “Although hot electrons near the drain of MOSFETs have a mean free path of a few Angstroms, which is much shorter than present day channel lengths, it has been shown that a 100 nm channel length device operates at roughly 40% of the ballistic limit [15], [ 21 ].”
Carrier-Transport-Enhanced Channel CMOS for Improved Power Consumption and Performance (2008, background): “Since r is directly related to μs, the enhancement of mobility can be still important in increasing Ion under quasiballistic transport regime [10], [11].”
Silicon CMOS devices beyond scaling (2006, background): “Ballistic transport is difficult to attain in modern scaled silicon FETs [61, 63], where mobilities are low.”
On the mobility versus drain current relation for a nanoscale MOSFET (2001, unknown): “(12) For current technology, , [13], [14], so .”
Theory of ballistic nanotransistors (2003, background): “Comparisons with experiments suggest that present-day MOSFETs operate at roughly 50% of the ballistic limit [16], [32], and much of the research on new channel materials is motivated by a desire to”
Modeling of Surface-Roughness Scattering in Ultrathin-Body SOI MOSFETs (2007, background): “As device scaling causes higher confining fields at the interface, the importance of this process is expected to dominate device performance, even preventing ballistic transport from occurring [1].”
Nanoscale Transistors: Device Physics, Modeling and Simulation (2005, background): “…West Lafayette, IN 47907 Chapter 4: Scattering Theory of the MOSFET 4.1 Introduction 4.2 MOSFET physics in the presence of scattering 4.3 The scattering model 4.4 The transmission coefficient under low drain bias 4.5 The transmission coefficient under high drain bias 4.6 Discussion 4.7 Summary”
A Simple Semiempirical Short-Channel MOSFET Current–Voltage Model Continuous Across All Regions of Operation and Employing Only Physical Parameters (2009, background): “velocity for short-channel MOSFETs has been shown in the literature [19], [ 20 ], and the coefficient here is quite reasonable.”