Experimental study on carrier transport mechanism in ultrathin-body SOI nand p-MOSFETs with SOI thickness less than 5 nm

By Ken Uchida, Hiroshi Watanabe, Atsuhiro Kinoshita, Junji Koga, Toshinori Numata, Shin-ichi Takagi. Digest. International Electron Devices Meeting,, 2002

303 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/1edc0fa389eb83ae57a196a417c20d7984893b4e

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In Electrical and Electronic Engineering

1. Charles M. Lieber
2. J. Xiang
3. Wei-Yuen Lu
4. Yue Wu
5. Wilfried E. Haensch
6. Massimo V. Fischetti
7. Edward J. Nowak
8. Arvind Kumar

Citations in the corpus

• Silicon CMOS devices beyond scaling (2006, background): “Mobility degradation due to quantum confinement becomes significant [41, 42] at body thicknesses below 5 nm.”
• Ge/Si nanowire heterostructures as high-performance field-effect transistors (2006, background): “10 Si(110), <110>, this work Si(100) [15] Ge-rich strained SGOI [16] Strained SOI [17] 7 4 3 Enhancement factor Ninv 1 10 13 cm 2”