Modeling of Surface-Roughness Scattering in Ultrathin-Body SOI MOSFETs

By Seonghoon Jin, Massimo V. Fischetti, Ting-Wei Tang. IEEE Transactions on Electron Devices, 2007

156 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/2b16f7d160be4558c020a7dfca26aa77790d00a4

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In Electrical and Electronic Engineering

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Citations in the corpus

• Field-effect transistors built from all two-dimensional material components. (2014, background): “to the device surface, thereby making them more susceptible to surface roughness scattering.(32) In contrast, in the all-2D FET, the impact of surface roughness scattering of carriers is expected to be less severe given”