Debdeep Jena
Materials Chemistry · 2000–2020
A researcher in the Science corpus: 38 papers; trusts 11 researchers and is trusted by 6 researchers here, as inferred from the citation graph.
Subfields
- Materials Chemistry — 375 citations into it; #4,208 of 11,513 by trust here, #906 by citations
- Electrical and Electronic Engineering — 206 citations into it
- Atomic and Molecular Physics, and Optics — 101 citations into it; #6,574 of 7,135 by trust here, #1,733 by citations
Whom Debdeep Jena trusts overall
Their strongest outbound trust, strongest first, inferred from their citations.
Who trusts Debdeep Jena overall
Papers from Debdeep Jena's perspective
Ordered by how strongly the researchers Debdeep Jena trusts endorse each paper. Same corpus, a different order for every researcher.
- Single-layer MoS2 transistors. (Nature Nanotechnology)
- Channel length scaling of MoS2 MOSFETs. (ACS Nano)
- High-performance single layered WSe₂ p-FETs with chemically doped contacts. (Nano letters (Print))
- Generalized Gradient Approximation Made Simple.
- Self-Consistent Equations Including Exchange and Correlation Effects
- Intrinsic and extrinsic performance limits of graphene devices on SiO2. (Nature Nanotechnology)
- Performance Enhancement of Vertical Tunnel Field-Effect Transistor with SiGe in the δp+ Layer
- Accurate description of van der Waals complexes by density functional theory including empirical corrections (Journal of Computational Chemistry)
- Tunneling Field-Effect Transistors (TFETs) With Subthreshold Swing (SS) Less Than 60 mV/dec (IEEE Electron Device Letters)
- Band-to-band tunneling in carbon nanotube field-effect transistors. (Physical Review Letters)
Their papers
- High‐Detectivity Multilayer MoS2 Phototransistors with Spectral Response from Ultraviolet to Infrared (2012) — 1,059 citations
- Carrier statistics and quantum capacitance of graphene sheets and ribbons (2007) — 677 citations
- High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals (2012) — 1,544 citations
- Broadband graphene terahertz modulators enabled by intraband transitions (2012) — 1,033 citations
- Exciton dynamics in suspended monolayer and few-layer MoS₂ 2D crystals. (2013) — 783 citations
- Charge Scattering and Mobility in Atomically Thin Semiconductors (2013) — 286 citations
- Computational Study of Metal Contacts to Monolayer Transition-Metal Dichalcogenide Semiconductors (2014) — 544 citations
- Single-particle tunneling in doped graphene-insulator-graphene junctions (2011) — 156 citations
- Polarization-Induced Hole Doping in Wide–Band-Gap Uniaxial Semiconductor Heterostructures (2010) — 763 citations
- Role of metal contacts in designing high-performance monolayer n-type WSe2 field effect transistors. (2013) — 934 citations
- Enhancement-Mode Ga2O3 Vertical Transistors With Breakdown Voltage >1 kV (2018) — 222 citations
- Unique prospects for graphene-based terahertz modulators (2011) — 215 citations
- Effect of high- κ gate dielectrics on charge transport in graphene-based field effect transistors (2010) — 252 citations
- Anisotropic thermal conductivity in single crystal β-gallium oxide (2014) — 514 citations
- High-voltage field effect transistors with wide-bandgap β-Ga2O3 nanomembranes (2013) — 346 citations
- Breakdown mechanism in 1 kA/cm2 and 960 V E-mode β-Ga2O3 vertical transistors (2018) — 140 citations
- Transistors with chemically synthesized layered semiconductor WS2 exhibiting 105 room temperature modulation and ambipolar behavior (2012) — 271 citations
- Two-dimensional semiconductors for transistors (2016) — 1,454 citations
- Near unity ideality factor and Shockley-Read-Hall lifetime in GaN-on-GaN p-n diodes with avalanche breakdown (2015) — 188 citations
- Intrinsic electron mobility limits in β-Ga2O3 (2016) — 357 citations