Charge Scattering and Mobility in Atomically Thin Semiconductors

By N. Ma, Debdeep Jena. 2013

286 citations recorded by the source corpus.

The electron transport properties of atomically thin semiconductors such as MoS2 have attracted significant recent scrutiny and controversy. In this work, the scattering mechanisms responsible for limiting the mobility of single layer semiconductors are evaluated. The roles of individual scattering rates are tracked as the 2D electron gas density is varied over orders of magnitude at various temperatures. From a comparative study of the individual scattering mechanisms, we conclude that all current reported values of mobilities in atomically thin transition-metal dichalcogenide semiconductors are limited by ionized impurity scattering. When the charged impurity densities are reduced, remote optical phonon scattering will determine the ceiling of the highest mobilities attainable in these ultrathin materials at room temperature. The intrinsic mobilities will be accessible only in clean suspended layers, as is also the case for graphene. Based on the study, we identify the best choices for surrounding dielectrics that will help attain the highest mobilities.

Subfields: Atomic and Molecular Physics, and Optics, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/a51e3bfbf6b0cd1be9a8aeee76f994090305e1ce

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

In Materials Chemistry

Citations in the corpus

Emerging device applications for semiconducting two-dimensional transition metal dichalcogenides. (2014, result): “107 This value is approximately 5 times greater than the largest experimentally reported values at 300 K,(82) suggesting that room temperature mobilities are further degraded by charged impurities and sub-optimal sample quality.(111) While early calculations neglected impurities/defects and thus ove”
2D semiconducting materials for electronic and optoelectronic applications: potential and challenge (2020, background): “The numbers on the curves show the dielectric constant [69].”
A roadmap for electronic grade 2D materials (2019, background): “[181] Ma N and Jena D 2014 Charge scattering and mobility in atomically thin semiconductors Phys.”
Progress in Contact, Doping and Mobility Engineering of MoS2: An Atomically Thin 2D Semiconductor (2018, background): “Note that higher “κ” values increased polarizability of the high-κ dielectric, leading to improved dielectric screening of CIs (Figure 17a illustrates the effect of a “high-κ” environment in minimizing the spread of the Coulombic potential or the localized electric field generated by the charged imp”