Intrinsic and extrinsic performance limits of graphene devices on SiO2.

By Jianhao Chen, C. Jang, S. Xiao, M. Ishigami, M. Fuhrer. Nature Nanotechnology, 2007

2,898 citations recorded by the source corpus.

The linear dispersion relation in graphene gives rise to a surprising prediction: the resistivity due to isotropic scatterers, such as white-noise disorder or phonons, is independent of carrier density, n. Here we show that electron-acoustic phonon scattering is indeed independent of n, and contributes only 30 Omega to graphene's room-temperature resistivity. At a technologically relevant carrier density of 1 x1012 cm-2, we infer a mean free path for electron-acoustic phonon scattering of >2 microm and an intrinsic mobility limit of 2 x 105 cm2 V-1 s-1. If realized, this mobility would exceed that of InSb, the inorganic semiconductor with the highest known mobility ( approximately 7.7 x 104 cm2 V-1 s-1; ref. 9) and that of semiconducting carbon nanotubes ( approximately 1 x 105 cm2 V-1 s-1; ref. 10). A strongly temperature-dependent resistivity contribution is observed above approximately 200 K (ref. 8); its magnitude, temperature dependence and carrier-density dependence are consistent with extrinsic scattering by surface phonons at the SiO2 substrate and limit the room-temperature mobility to approximately 4 x 104 cm2 V-1 s-1, indicating the importance of substrate choice for graphene devices.

Subfields: Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/05369773f3310c151a5ce434d0aa5fa0e2baa29d

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In Materials Chemistry

  1. A. Di Bartolomeo
  2. K. Novoselov
  3. E. Rossi
  4. E. Hwang
  5. S. Adam
  6. Takashi Taniguchi
  7. Kenji Watanabe
  8. Phaedon Avouris

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