Single-particle tunneling in doped graphene-insulator-graphene junctions

By R. M. Feenstra, Debdeep Jena, G. Gu. 2011

156 citations recorded by the source corpus.

The characteristics of tunnel junctions formed between n- and p-doped graphene are investigated theoretically. The single-particle tunnel current that flows between the twodimensional electronic states of the graphene (2D-2D tunneling) is evaluated. At a voltage bias such that the Dirac points of the two electrodes are aligned, a large resonant current peak is produced. The magnitude and width of this peak are computed, and its use for devices is discussed. The influences of both rotational alignment of the graphene electrodes and structural perfection of the graphene are also discussed.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/ac334da9eec2e78d85cb60d2aa7f11b40a1abae2

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In Atomic and Molecular Physics, and Optics

1. Robert M. Wallace
2. Mauricio Terrones

In Electrical and Electronic Engineering

1. Long-qing Chen
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Citations in the corpus

• A roadmap for electronic grade 2D materials (2019, background): “[177] Feenstra R M, Jena D and Gu G 2012 Single-particle tunneling”