Computational Study of Metal Contacts to Monolayer Transition-Metal Dichalcogenide Semiconductors
By Jiahao Kang, Wei David Liu, Deblina Sarkar, Debdeep Jena, Kaustav Banerjee. 2014
544 citations recorded by the source corpus.
Modern electronics rely on semiconductors such as silicon. Researchers show how a new class of semiconductors---monolayer transition-metal dichalcogenides---can be optimized to improve device performance.
Subfields: Electrical and Electronic Engineering, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/62c853547c355deaf90524b17b1a83e4f86c6da0
How researchers see this paper
The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.
In Electrical and Electronic Engineering
- Wei David Liu
- Kaustav Banerjee
- Jiahao Kang
- Dmitri Golberg
- Yoshio Bando
- Wei Cao
- Filippo Giubileo
- Sanjay Kumar Banerjee
In Materials Chemistry
- Dmitri Golberg
- Kaustav Banerjee
- Yoshio Bando
- Wei Cao
- Jiahao Kang
- Wei David Liu
- Filippo Giubileo
- Sanjay Kumar Banerjee
Citations in the corpus
- Halide-Assisted Atmospheric Pressure Growth of Large WSe2 and WS2 Monolayer Crystals (2015, background): “6 eV), which is close to the valence band of WSe2, allows efficient injection of holes into the WSe2 channel [10,45].”
- The role of contact resistance in graphene field-effect devices (2017, background): “Despite the lack of dangling bonds in MX2, metals with low workfunction cause the formation of interface states provoking pinning of Fermi level and an important (Schottky) barrier for the electrons [237-238].”
- A Compact Current–Voltage Model for 2D Semiconductor Based Field-Effect Transistors Considering Interface Traps, Mobility Degradation, and Inefficient Doping Effect (2014, background): “8 k ·μm for few-layer MoS2 FETs [8]) by effectively metalizing the TMD underneath with selected metals that can form overlapped d-orbitals with TMD, so that the Schottky and tunnel barriers vanish [11], [24], the resistances in the S/D extensions between gate and contact remain high.”
- Progress in Contact, Doping and Mobility Engineering of MoS2: An Atomically Thin 2D Semiconductor (2018, background): “metal/MoS2 SB (as shown in Figure 3a) and can increase the overall RC [110,134,148].”