Effect of high- κ gate dielectrics on charge transport in graphene-based field effect transistors

By A. Konar, T. Fang, Debdeep Jena. 2010

252 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/b504bad7151ab9676fc3c94abf203d3ac6e049ba

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

1. Sanjay Kumar Banerjee
2. Frank Schwierz
3. Gwan‐Hyoung Lee

In Electrical and Electronic Engineering

1. Sanjay Kumar Banerjee
2. Frank Schwierz

In Materials Chemistry

1. Sanjay Kumar Banerjee
2. Hema C. P. Movva
3. Frank Schwierz
4. Amritesh Rai
5. D. Taneja
6. Anupam Roy
7. Gwan‐Hyoung Lee
8. Sayema Chowdhury

Citations in the corpus

• Charge Scattering and Mobility in Atomically Thin Semiconductors (2013, unknown): “The electron-SO phonon interaction Hamiltonian is [15,17,18]”
• Progress in Contact, Doping and Mobility Engineering of MoS2: An Atomically Thin 2D Semiconductor (2018, background): “[351] as well as for charge carriers in the inversion layer of conventional Si MOSFETs as shown by Fischetti et al.”
• Graphene Transistors: Status, Prospects, and Problems (2013, background): “The mobility depends on the carrier density n and decreases with increasing n following the relation ðnÞ n b where b is a fitting parameter [56], [57].”
• 2D semiconducting materials for electronic and optoelectronic applications: potential and challenge (2020, background): “The effect of dielectric screening was also studied: High-k dielectric materials were reported to enhance the mobility due to screening effects [88, 90, 109] attributed to the top-gate capacitance [110].”