Ernest Y. Wu
Electrical and Electronic Engineering · 2000–2018
A researcher in the Science corpus: 5 papers; trusts 1 researcher and is trusted by 1 researcher here, as inferred from the citation graph.
Subfields
- Electrical and Electronic Engineering — 48 citations into it; #12,180 of 16,539 by trust here, #7,770 by citations
- Materials Chemistry — 27 citations into it
Whom Ernest Y. Wu trusts overall
Their strongest outbound trust, strongest first, inferred from their citations.
Who trusts Ernest Y. Wu overall
Papers from Ernest Y. Wu's perspective
Ordered by how strongly the researchers Ernest Y. Wu trusts endorse each paper. Same corpus, a different order for every researcher.
- New physics-based analytic approach to the thin-oxide breakdown statistics (IEEE Electron Device Letters)
- Multiple-gate SOI MOSFETs
- A continuous, analytic drain-current model for DG MOSFETs
- Beyond the conventional transistor (IBM Journal of Research and Development)
- Modeling of nanoscale gate-all-around MOSFETs (IEEE Electron Device Letters)
- Multiple-gate SOI MOSFETs: device design guidelines
- Ultra-thin oxide reliability for ULSI applications
- Electronics using hybrid-molecular and mono-molecular devices (Nature)
- Rapid nanopore discrimination between single polynucleotide molecules. (Proceedings of the National Academy of Sciences of the United States of America)
- Disorder-controlled-kinetics model for negative bias temperature instability and its experimental verification (2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual.)
Their papers
- Recommended Methods to Study Resistive Switching Devices (2018) — 574 citations
- Ultra-thin oxide reliability for ULSI applications (2000) — 147 citations
- On the Weibull shape factor of intrinsic breakdown of dielectric films and its accurate experimental determination. Part I: theory, methodology, experimental techniques (2002) — 156 citations
- Reliability Wearout Mechanisms in Advanced CMOS Technologies (2009) — 150 citations
- Experimental evidence of T/sub BD/ power-law for voltage dependence of oxide breakdown in ultrathin gate oxides (2002) — 133 citations