A continuous, analytic drain-current model for DG MOSFETs

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Continuous analytic I-V model for surrounding-gate MOSFETs (2004, background): “for the double-gate (DG) MOSFET [2], can be carried out for the SGT MOSFET.”
Analytic Model for the Surface Potential and Drain Current in Negative Capacitance Field-Effect Transistors (2010, background): “As expected, (3) and (5) reduce to the expressions for a DG-MOSFET [ 9 ] after the identification that a0 = 1/Cox and b0 = c0 = 0, where Cox is the oxide capacitance.”
A Full-Range Drain Current Model for Double-Gate Junctionless Transistors (2011, methodology): “In contrast, electrons in conventional inversion-mode DGFETs are distinctively confined near the interface (surface inversion) in the linear region producing the surface current, whereas they are concentrated at the center of the channel (volume inversion) in the subthreshold region [ 6 ].”
A 2-D Analytical Model for Double-Gate Tunnel FETs (2014, background): “Since the current flows mainly along the channel from the source to the drain, the electron quasiFermi potential is almost constant in x-direction and varies only in y-direction [21].”
Explicit Continuous Models for Double-Gate and Surrounding-Gate MOSFETs (2007, methodology): “Recently, continuous analytic drain current models have been developed for DG [ 4 ] and SG [5] MOSFETs, respectively.”