Beyond the conventional transistor
By H. Philip Wong. IBM Journal of Research and Development, 2002
676 citations recorded by the source corpus.
Subfields: Electrical and Electronic Engineering, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/5f88452e8337987b5956996e3a0bd1e5e80b149b
How researchers see this paper
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In Electrical and Electronic Engineering
- David Jiménez
- Jordi Suñé
- Arvind Kumar
- Robert W. Keyes
- Kathryn W. Guarini
- H. A. Hamid
- Enrique Miranda
- Andres Godoy
In Materials Chemistry
Citations in the corpus
- Three-dimensional integrated circuits (2006, methodology): “This goal has been achieved by the use of two solutions: 1) scaling devices and associated interconnecting wire [1] through the implementation of new materials and processing innovations, and 2) introducing architecture enhancements [2] to reconfigure routing, hierarchy, and placement of critical ci”
- Physical limits of silicon transistors and circuits (2005, background): “One possible sequence is suggested by Wong (2002).”
- Modeling of nanoscale gate-all-around MOSFETs (2004, background): “The small vertical electric field and the use of undoped silicon channels in these structures reduce the surface and Coulomb’s scattering [2], being the electronic transport close to the ballistic regime.”