Rolf-Peter Vollertsen

2002–2009

A researcher in the Science corpus: 3 papers; trusts 1 researcher and is trusted by 0 researchers here, as inferred from the citation graph.

Whom Rolf-Peter Vollertsen trusts overall

Their strongest outbound trust, strongest first, inferred from their citations.

  1. Jordi Suñé

Papers from Rolf-Peter Vollertsen's perspective

Ordered by how strongly the researchers Rolf-Peter Vollertsen trusts endorse each paper. Same corpus, a different order for every researcher.

  1. New physics-based analytic approach to the thin-oxide breakdown statistics (IEEE Electron Device Letters)
  2. Multiple-gate SOI MOSFETs
  3. A continuous, analytic drain-current model for DG MOSFETs
  4. Beyond the conventional transistor (IBM Journal of Research and Development)
  5. Modeling of nanoscale gate-all-around MOSFETs (IEEE Electron Device Letters)
  6. Multiple-gate SOI MOSFETs: device design guidelines
  7. Ultra-thin oxide reliability for ULSI applications
  8. Disorder-controlled-kinetics model for negative bias temperature instability and its experimental verification (2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual.)
  9. A comprehensive model of PMOS NBTI degradation (Microelectronics and reliability)
  10. A critical examination of the mechanics of dynamic NBTI for PMOSFETs (IEEE International Electron Devices Meeting 2003)

Their papers