An Chen

Electrical and Electronic Engineering · 2016

A researcher in the Science corpus: 1 paper; trusts 11 researchers and is trusted by 5 researchers here, as inferred from the citation graph.

Subfields

Whom An Chen trusts overall

Their strongest outbound trust, strongest first, inferred from their citations.

  1. R. Freitas
  2. Charles Herder
  3. Shoji Ikeda
  4. Winfried W. Wilcke
  5. Meng-Day (Mandel) Yu
  6. Geoffrey W. Burr
  7. Ting Chang
  8. Tengyu Ma
  9. Y. Dan
  10. Farinaz Koushanfar

Who trusts An Chen overall

  1. Thomas McGrath
  2. Ibrahim Ethem Bagci
  3. Zhiming M. Wang
  4. Utz Roedig

Papers from An Chen's perspective

Ordered by how strongly the researchers An Chen trusts endorse each paper. Same corpus, a different order for every researcher.

  1. Overview of candidate device technologies for storage-class memory (IBM Journal of Research and Development)
  2. Storage-class memory: The next storage system technology (IBM Journal of Research and Development)
  3. Low power and high speed bipolar switching with a thin reactive Ti buffer layer in robust HfO2 based RRAM (2008 IEEE International Electron Devices Meeting)
  4. Why is nonvolatile ferroelectric memory field-effect transistor still elusive? (IEEE Electron Device Letters)
  5. Phase change memory technology
  6. Highly reliable TaOx ReRAM and direct evidence of redox reaction mechanism (2008 IEEE International Electron Devices Meeting)
  7. Experimental demonstration and tolerancing of a large-scale neural network (165,000 synapses), using phase-change memory as the synaptic weight element (2014 IEEE International Electron Devices Meeting)
  8. Ferroelectric hafnium oxide: A CMOS-compatible and highly scalable approach to future ferroelectric memories (2013 IEEE International Electron Devices Meeting)
  9. Spin-Torque Switching with the Giant Spin Hall Effect of Tantalum (Science)
  10. Nanoscale memristor device as synapse in neuromorphic systems.

Their papers