Continuous analytic I-V model for surrounding-gate MOSFETs

By David Jiménez, B. Iñíguez, Jordi Suñé, L. Marsal, J. Pallarès, J. Roig, D. Flores. IEEE Electron Device Letters, 2004

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Scaling of Nanowire Transistors (2008, background): “Therefore, a 2-D quantum well with flat bottom [31] and infinitely high potential barrier can be assumed.”
Theory of the Junctionless Nanowire FET (2011, background): “Replacing this factor in (30) provides a result consistent with that in [2], which only holds for an undoped semiconductor.”
Explicit continuous model for long-channel undoped surrounding gate MOSFETs (2005, methodology): “The new model is based on a unified charge control model for a SGT MOSFET, which results from a reformulation of the previous model [3].”
Explicit Continuous Models for Double-Gate and Surrounding-Gate MOSFETs (2007, methodology): “Recently, based on a reformulation of the previous model [ 5 ], Jimenez et al. have developed an explicit continuous drain current model for SG MOSFETs [10].”
Analytic Model for the Surface Potential and Drain Current in Negative Capacitance Field-Effect Transistors (2010, background): “easily extended to other geometries such as for instance, single-gate or surroundinggate geometries [4-6].”