New physics-based analytic approach to the thin-oxide breakdown statistics

By Jordi Suñé. IEEE Electron Device Letters, 2001

276 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/a8b573fd34bf75900872d9234fe4ddb89bb56048

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Citations in the corpus

Trends in the ultimate breakdown strength of high dielectric-constant materials (2003, background): “... of dielectric constant k is given by . The Bohr orbital represents the distance at which the probability of finding the bound electron is greatest, however, the radial wave function actually extends to at least four Bohr orbitals: giving a total cell-size (diameter) of for the defect/percolation”
Experimental evidence of T/sub BD/ power-law for voltage dependence of oxide breakdown in ultrathin gate oxides (2002, methodology): “This first process is well understood because of the success of the percolation model [31], [32] and the analytic model [ 33 ] in terms of explaining the thickness and area-dependence of breakdown statistics such as Weibull slopes.”
Review on high-k dielectrics reliability issues (2005, background): “Indeed the defect cross section in the SiO is supposed to be close to this thickness [50].”
On the Weibull shape factor of intrinsic breakdown of dielectric films and its accurate experimental determination. Part I: theory, methodology, experimental techniques (2002, background): “In the context of intrinsic oxide breakdown, the physical meaning of defect in (3) is equivalent to the concept of “breakdown path” recently proposed in [7], [9], [10], and [ 12 ].”
Reliability Challenges for CMOS Technology Qualifications With Hafnium Oxide/Titanium Nitride Gate Stacks (2009, background): “The first process is referred to as Soft Breakdown (SBD), and it is attributed to the formation of a percolation path between the two electrodes [48]‐[ 50 ].”
Dielectric breakdown of polyimide films: Area, thickness and temperature dependence (2010, background): “This atypical behavior has already been discussed in the literature for thin oxides and seems to be related to percolation theories [39–41].”