Wilfried E. Haensch

Electrical and Electronic Engineering · 2002–2015

A researcher in the Science corpus: 12 papers; trusts 5 researchers and is trusted by 0 researchers here, as inferred from the citation graph.

Subfields

• Electrical and Electronic Engineering — 49 citations into it
• Materials Chemistry — 29 citations into it
• Biomedical Engineering — 14 citations into it

Whom Wilfried E. Haensch trusts overall

Their strongest outbound trust, strongest first, inferred from their citations.

1. Supriyo Datta
2. Joachim Knoch
3. Massimo V. Fischetti
4. Joerg Appenzeller
5. Mark S. Lundstrom

Who trusts Wilfried E. Haensch overall

1. Eric Pop

Papers from Wilfried E. Haensch's perspective

Ordered by how strongly the researchers Wilfried E. Haensch trusts endorse each paper. Same corpus, a different order for every researcher.

1. On experimental determination of carrier velocity in deeply scaled NMOS: how close to the thermal limit? (IEEE Electron Device Letters)
2. Ballistic carbon nanotube field-effect transistors (Nature)
3. Performance analysis and design optimization of near ballistic carbon nanotube field-effect transistors (IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004.)
4. The effective drive current in CMOS inverters (Digest. International Electron Devices Meeting,)
5. Analytic description of short-channel effects in fully-depleted double-gate and cylindrical, surrounding-gate MOSFETs (IEEE Electron Device Letters)
6. Fabrication and mobility characteristics of ultra-thin strained Si directly on insulator (SSDOI) MOSFETs (IEEE International Electron Devices Meeting 2003)
7. Complementary Silicon-Based Heterostructure Tunnel-FETs With High Tunnel Rates (IEEE Electron Device Letters)
8. Six-band k⋅p calculation of the hole mobility in silicon inversion layers: Dependence on surface orientation, strain, and silicon thickness
9. Measurement of the quantum capacitance of interacting electrons in carbon nanotubes
10. Limits to binary logic switch scaling - a gedanken model (Proceedings of the IEEE)

Their papers

• Sub-10 nm carbon nanotube transistor (2011) — 740 citations
• Stable SRAM cell design for the 32 nm node and beyond (2005) — 618 citations
• High-performance CMOS variability in the 65-nm regime and beyond (2006) — 707 citations
• High-voltage field effect transistors with wide-bandgap β-Ga2O3 nanomembranes (2013) — 346 citations
• Metal-gate FinFET and fully-depleted SOI devices using total gate silicidation (2002) — 181 citations
• Self-aligned n-channel germanium MOSFETs with a thin Ge oxynitride gate dielectric and tungsten gate (2004) — 163 citations
• Silicon CMOS devices beyond scaling (2006) — 464 citations
• Electrical integrity of state-of-the-art 0.13 /spl mu/m SOI CMOS devices and circuits transferred for three-dimensional (3D) integrated circuit (IC) fabrication (2002) — 139 citations
• On the Possibility of Obtaining MOSFET-Like Performance and Sub-60-mV/dec Swing in 1-D Broken-Gap Tunnel Transistors (2010) — 167 citations
• A Compact Virtual-Source Model for Carbon Nanotube FETs in the Sub-10-nm Regime—Part I: Intrinsic Elements (2015) — 192 citations
• An 8T-SRAM for Variability Tolerance and Low-Voltage Operation in High-Performance Caches (2008) — 458 citations
• The effective drive current in CMOS inverters (2002) — 255 citations