Self-aligned n-channel germanium MOSFETs with a thin Ge oxynitride gate dielectric and tungsten gate

By Huiling Shang, Kam-Leung Lee, P. Kozłowski, C. D'Emic, I. Babich, E. Sikorski, Meikei Ieong, H.-S.P. Wong, Kathryn W. Guarini, Wilfried E. Haensch. IEEE Electron Device Letters, 2004

163 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/25d696075449db4c895b4553e9edfda6aa7ddf34

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

1. Paul C. McIntyre
2. Krishna C. Saraswat

In Electrical and Electronic Engineering

1. Paul C. McIntyre
2. Krishna C. Saraswat
3. Duygu Kuzum
4. Ryosho Nakane
5. Shimeng Yu
6. Mamidala Jagadesh Kumar

Citations in the corpus

• Carrier-Transport-Enhanced Channel CMOS for Improved Power Consumption and Performance (2008, background): “It has been reported so far, however [41], [42], that”
• Ge-Interface Engineering With Ozone Oxidation for Low Interface-State Density (2008, background): “However, Ge NMOS exhibited poor drive current and low mobility by several demonstrations worldwide [6], [7].”