Measurement of the quantum capacitance of interacting electrons in carbon nanotubes
By S. Ilani, L. Donev, Markus Kindermann, Paul L. McEuen. 2006
282 citations recorded by the source corpus.
Subfields: Atomic and Molecular Physics, and Optics, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/0c408fb8604df65c368f79fcf15a8ca4a511cb1e
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In Atomic and Molecular Physics, and Optics
- Phaedon Avouris
- V. Perebeinos
- Zhihong Chen
- Dmitri E. Nikonov
- Mark S. Lundstrom
- H. Philip Wong
- Eric Pop
- Jie Deng
In Materials Chemistry
- H. Philip Wong
- Phaedon Avouris
- Jie Deng
- Aaron D. Franklin
- Zhihong Chen
- V. Perebeinos
- Eric Pop
- Mark S. Lundstrom
Citations in the corpus
- A Compact SPICE Model for Carbon-Nanotube Field-Effect Transistors Including Nonidealities and Its Application—Part I: Model of the Intrinsic Channel Region (2007, background): “This property can potentially be used to determine the nanotube diameter once the gate capacitance is measured [29].”
- A Compact Virtual-Source Model for Carbon Nanotube FETs in the Sub-10-nm Regime—Part I: Intrinsic Elements (2015, background): “metal interfaces and the very small capacitance (aF range) of the 1D channels [61-62].”
- Performance Comparison Between p-i-n Tunneling Transistors and Conventional MOSFETs (2008, methodology): “This relationship has also been experimentally verified in the case of CNT-MOSFETs [49].”
- Carbon-based electronics. (2007, background): “This quantum capacitance, C Q , is small — of the order of 10 −16 F μm −1 (ref”