Polarization engineering via staggered InGaN quantum wells for radiative efficiency enhancement of light emitting diodes

By R. Arif, Y. Ee, Nelson Tansu. 2007

309 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Mechanics of Materials

View Paper: https://www.semanticscholar.org/paper/1a29a4d0600b873f3945f855d0fe265fbedb2171

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Condensed Matter Physics

1. Nelson Tansu
2. Hongping Zhao
3. R. Arif
4. Guangyu Liu
5. Jing Zhang
6. Y. Ee
7. Xiao-Hang Li
8. H. Tong

In Electronic, Optical and Magnetic Materials

1. Hongping Zhao
2. Nelson Tansu
3. R. Arif
4. Y. Ee

In Mechanics of Materials

1. Hongping Zhao
2. Nelson Tansu
3. R. Arif
4. Guangyu Liu
5. Y. Ee
6. Jing Zhang

Citations in the corpus

• Spontaneous Emission and Characteristics of Staggered InGaN Quantum-Well Light-Emitting Diodes (2008, background): “tation of the staggered InGaN QW as the active region of the LEDs also exhibits significant output power improvement [13].”
• Self-Consistent Analysis of Strain-Compensated InGaN–AlGaN Quantum Wells for Lasers and Light-Emitting Diodes (2009, methodology): “separation effect in InGaN QW active region, as follow 1) nonpolar InGaN QW growth [6]; 2) the use of -AlGaN layer in InGaN QW [7], [8]; 3) staggered InGaN QW [9], [10]; and 4) type-II InGaN–GaNAs QW [11].”
• III-Nitride Photonics (2010, background): “The concept of staggered InGaN QW LEDs was proposed and demonstrated previously [7]–[9], and recent experimental works on the growth of three-layer staggered InGaNQWLEDs have resulted in a 2.”