Auger recombination in InGaN measured by photoluminescence

By Y. Shen, G. Mueller, S. Watanabe, N. Gardner, A. Munkholm, Michael R. Krames. 2007

1,098 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Condensed Matter Physics, Electronic, Optical and Magnetic Materials

View Paper: https://www.semanticscholar.org/paper/88b6f782b224ba2193f58d05d94d11e7e0c88916

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

1. Nelson Tansu
2. Hongping Zhao
3. R. Arif
4. Guangyu Liu
5. Jing Zhang
6. M. Crawford
7. S. Karpov
8. S. Tan

In Condensed Matter Physics

1. Nelson Tansu
2. Hongping Zhao
3. R. Arif
4. Guangyu Liu
5. Jing Zhang
6. Y. Ee
7. M. Crawford
8. Steven P. DenBaars

In Electronic, Optical and Magnetic Materials

1. Hongping Zhao
2. Nelson Tansu
3. R. Arif
4. Y. Ee
5. M. Crawford
6. S. Karpov

Citations in the corpus

• ABC-model for interpretation of internal quantum efficiency and its droop in III-nitride LEDs: a review (2014, positive): “Being the basis for the guess on the influential role of Auger recombination for LED efficiency [1], the ABC-model turned out to be helpful for finding effective ways to improve the device performance [2].”
• Asymmetry of carrier transport leading to efficiency droop in GaInN based light-emitting diodes (2011, background): “Several mechanisms have been proposed to explain efficiency droop, including electron leakage due to polarization mismatch [1], poor hole injection [2], delocalization of carriers [3], and Auger recombination [4].”
• History of Gallium–Nitride-Based Light-Emitting Diodes for Illumination (2013, background): “As a result, high carrier densities are present in the active region, which exacerbate the effects of Auger recombination [68], [69] and, potentially, carrier oveflow leakage [70], [71], resulting in strong efficiency droop.”
• Advances in the LED Materials and Architectures for Energy-Saving Solid-State Lighting Toward “Lighting Revolution” (2012, background): “Though the root-cause of the droop is still debatable, various models have been adopted to explain the droop, such as junction heating [10], electron overflow [11], [12], reduced effective radiative recombination rate due to the elevated plasma temperature caused by carrier–carrier and carrier–photo”
• LEDs for Solid-State Lighting: Performance Challenges and Recent Advances (2009, background): “to efficiency loss at high carrier densities [57].”
• Semipolar $({\hbox{20}}\bar{{\hbox{2}}}\bar{{\hbox{1}}})$ InGaN/GaN Light-Emitting Diodes for High-Efficiency Solid-State Lighting (2013, background): “Several mechanisms have been proposed as the origin of efficiency droop, including Auger recombination [2]–[4], electron leakage [5], [6], and carrier delocalization to defects [7].”