Improvement in spontaneous emission rates for InGaN quantum wells on ternary InGaN substrate for light-emitting diodes

By Nelson Tansu. 2011

168 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Condensed Matter Physics, Electronic, Optical and Magnetic Materials

View Paper: https://www.semanticscholar.org/paper/31fddd9ab6063dfc6a45d399c8b8470abe1d00cd

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In Atomic and Molecular Physics, and Optics

1. S. Tan
2. X. Sun
3. Hilmi Volkan Demir
4. Steven P. DenBaars

In Condensed Matter Physics

1. S. Tan
2. X. Sun
3. Hilmi Volkan Demir
4. Steven P. DenBaars
5. Umesh K. Mishra

Citations in the corpus

• Advances in the LED Materials and Architectures for Energy-Saving Solid-State Lighting Toward “Lighting Revolution” (2012, background): “proposed numerically the growth of III-nitride LEDs on InGaN ternary substrate that gives rise to higher spontaneous emission rate and reduced blue-shift of peak emission wavelength [39].”