Auger recombination rates in nitrides from first principles
By Kris T. Delaney, Patrick Rinke, C. D. Walle. 2009
362 citations recorded by the source corpus.
We report Auger recombination rates for wurtzite InGaN calculated from first-principles density-functional and many-body-perturbation theory. Two different mechanisms are examined—inter- and intra-band recombination—that affect different parts of the emission spectrum. In the blue to green spectral region and at room temperature the Auger coefficient can be as large as 2×10−30 cm6 s−1; in the infrared it is even larger. Since Auger recombination scales with the cubic power of the free-carrier concentration it becomes an important nonradiative loss mechanism at high current densities. Our results indicate that Auger recombination may be responsible for the loss of quantum efficiency that affects InGaN-based light emitters.
Subfields: Atomic and Molecular Physics, and Optics, Condensed Matter Physics, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/d4ba1cbf2fae2eb1bb92f4c22a76edea1633a235
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In Atomic and Molecular Physics, and Optics
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Citations in the corpus
- Analysis of Internal Quantum Efficiency and Current Injection Efficiency in III-Nitride Light-Emitting Diodes (2013, background): “Further studies are still required to clarify and confirm the Auger coefficients ( ) for InGaN – GaN QW system, due to the large discrepancies from the reported Auger coefficients in the literatures [27]–[29], [54].”
- Heat and fluid flow in high-power LED packaging and applications (2016, methodology): “According to the reported Auger recombination coefficients in Table 2, the simulation work adopts 10 cm(6)/s for GaN-based LED chip design, which exhibits good prediction of device performance [25].”
- III-Nitride Photonics (2010, background): “Further studies are still required to clarify and confirm the Auger coefficients ðCÞ for InGaN/GaN QW system, due to the large discrepancies for the reported Auger coefficients in the literatures [34]–[37].”
- Visible-Light Communications Using a CMOS-Controlled Micro-Light- Emitting-Diode Array (2012, background): “suggested that the Auger coefficient increases as the bandgap energy decreases [16].”
- High-Power and High-Efficiency InGaN-Based Light Emitters (2010, background): “Finally, resonances due to interband Auger recombination may even enable direct Auger recombination in blue-green InGaNbased light emitters [16].”