Semiconductor Optoelectronic Devices: Introduction to Physics and Simulation

By J. Piprek. 2003

512 citations recorded by the source corpus.

View Paper: https://www.semanticscholar.org/paper/4a86dc34ecd2569e78211c3dff9c4e36f5d76e7c

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Citations in the corpus

• Efficiency droop in nitride‐based light‐emitting diodes (2010, methodology): “1 Defect-assisted mechanisms Typical nonradiative electron–hole recombination at crystal defects is described by the SRH model [11].”
• Efficient High-Power Laser Diodes (2013, background): “The analysis follows [40] and is based on the most simple assumption that all external currents are delivered loss free (at a density J) to the quantum well, where electrons and holes (with carrier density, n = p) recombine at a rate, Rc = n/τSRH+Bn(2) where B = 10−10cm−3 /s [35], [36], and τSRH is ”
• Spontaneous Emission and Characteristics of Staggered InGaN Quantum-Well Light-Emitting Diodes (2008, methodology): “both the axis and transverse directions [19].”