On the importance of radiative and Auger losses in GaN-based quantum wells

By J. Hader, J. Moloney, B. Pasenow, S. W. Koch, M. Sabathil, N. Linder, S. Lutgen. 2008

262 citations recorded by the source corpus.

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

III-Nitride Photonics (2010, background): “Recent theoretical studies predicted Auger recombination coefficient in InGaN/GaN QW system as C 1⁄4 3:5 10 34 cm6=s [36].”
Control of Quantum-Confined Stark Effect in InGaN-Based Quantum Wells (2009, background): “3It is claimed in [74] that direct Auger losses are negligible in InGaN-based semiconductor wells that can excludes these Auger losses as a possible reason for the efficiency droop.”
High-Power and High-Efficiency InGaN-Based Light Emitters (2010, background): “However, the direct band-to-band Auger effect as physical origin of the C · n(3) term is rendered unlikely according to theoretical many-particle calculations [15].”
Analysis of Internal Quantum Efficiency and Current Injection Efficiency in III-Nitride Light-Emitting Diodes (2013, methodology): “Further studies are still required to clarify and confirm the Auger coefficients ( ) for InGaN – GaN QW system, due to the large discrepancies from the reported Auger coefficients in the literatures [27]–[29], [54].”