Growths of staggered InGaN quantum wells light-emitting diodes emitting at 520–525 nm employing graded growth-temperature profile

By Hongping Zhao, Guangyu Liu, Xiaohang Li, G. S. Huang, J. Poplawsky, S. Penn, V. Dierolf, Nelson Tansu. 2009

170 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Condensed Matter Physics, Mechanics of Materials

View Paper: https://www.semanticscholar.org/paper/23a7010b125dde020f2c14bd9986f8f232ef1f1b