Low-threshold-current-density 1300-nm dilute-nitride quantum well lasers

By Nelson Tansu, Nicholas J. Kirsch, L. Mawst. 2002

156 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Condensed Matter Physics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/80197fa662ed58810235029f5c618cc03c89ad0a

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

1. Nelson Tansu
2. Hongping Zhao
3. R. Arif
4. Y. Ee
5. Guangyu Liu
6. Jing Zhang

In Condensed Matter Physics

1. Hongping Zhao
2. Nelson Tansu
3. R. Arif
4. Y. Ee
5. Guangyu Liu
6. Jing Zhang

In Electrical and Electronic Engineering

1. Hongping Zhao
2. R. Arif
3. Nelson Tansu
4. Y. Ee

Citations in the corpus

• Self-Consistent Analysis of Strain-Compensated InGaN–AlGaN Quantum Wells for Lasers and Light-Emitting Diodes (2009, methodology): “Similar concept of strain-compensated QW had also been previously applied for InGaAsN QW and InGaAs QW active regions by employing tensile GaAsP barriers, resulting in high-performance 1200–1400 nm emitting diode lasers on GaAs substrate [14]–[16].”