Self-Consistent Analysis of Strain-Compensated InGaN–AlGaN Quantum Wells for Lasers and Light-Emitting Diodes

By Hongping Zhao, R. Arif, Y. Ee, Nelson Tansu. IEEE Journal of Quantum Electronics, 2009

220 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Condensed Matter Physics, Mechanics of Materials

View Paper: https://www.semanticscholar.org/paper/365b27909eb52e00d8d39d6e959268d7153761d8

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

1. Nelson Tansu
2. Hongping Zhao
3. R. Arif
4. Guangyu Liu
5. Jing Zhang
6. Y. Ee

In Condensed Matter Physics

1. Nelson Tansu
2. Hongping Zhao
3. R. Arif
4. Guangyu Liu
5. Jing Zhang
6. Y. Ee
7. Xiao-Hang Li
8. H. Tong

In Mechanics of Materials

1. Hongping Zhao
2. Nelson Tansu
3. R. Arif
4. Guangyu Liu
5. Y. Ee
6. Jing Zhang

Citations in the corpus

• Analysis of Internal Quantum Efficiency and Current Injection Efficiency in III-Nitride Light-Emitting Diodes (2013, methodology): “method taking into account the valence band mixing, strain effect, and spontaneous and piezoelectric polarizations as well as the carrier screening effect [44].”
• Design Analysis of Staggered InGaN Quantum Wells Light-Emitting Diodes at 500–540 nm (2009, methodology): “The band structure calculation for the conventional and staggered InGaN QWs is based on self-consistent 6-band k·p formalism for wurtzite semiconductors [ 14 ]–[16].”
• III-Nitride Photonics (2010, methodology): “In addition to the use of staggered InGaN QW LEDs, several other approaches have been pursued as follow: type-II InGaN-GaNAs QW [17], [18], strain-compensated InGaN-AlGaNQW [19], [20], triangular InGaNQW [21], InGaNQWwith delta-AlGaN layer [22], [23], and dip-shape QWs [15].”