Metalorganic Vapor Phase Epitaxy of III-Nitride Light-Emitting Diodes on Nanopatterned AGOG Sapphire Substrate by Abbreviated Growth Mode

By Y. Ee, J. Biser, W. Cao, H. M. Chan, R. Vinci, Nelson Tansu. IEEE Journal of Selected Topics in Quantum Electronics, 2009

170 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/22440800c6c3e4906bbe1bb38269de5e5beb0d29

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In Condensed Matter Physics

1. Hongping Zhao
2. Nelson Tansu
3. Guangyu Liu
4. Jing Zhang
5. Y. Ee
6. Xiao-Hang Li
7. H. Tong
8. R. Arif

In Electronic, Optical and Magnetic Materials

1. Hongping Zhao
2. Nelson Tansu
3. Y. Ee

In Materials Chemistry

1. Nelson Tansu
2. Hongping Zhao

Citations in the corpus

• III-Nitride Photonics (2010, methodology): “The use of new Babbreviated growth mode[ of GaN on nanopatterned sapphire [62], [63] leads to the growth of GaN material with significant reduction in dislocation density (2-order of magnitude), as well as a reduction in epitaxy time/cost.”