Design Analysis of Staggered InGaN Quantum Wells Light-Emitting Diodes at 500–540 nm

By Hongping Zhao, R. Arif, Nelson Tansu. IEEE Journal of Selected Topics in Quantum Electronics, 2009

141 citations recorded by the source corpus.

Subfields: Biomedical Engineering, Condensed Matter Physics, Mechanics of Materials

View Paper: https://www.semanticscholar.org/paper/faf061fc67eba26cdecd462f14be35a131765a2c

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Biomedical Engineering

1. Nelson Tansu
2. Guangyu Liu
3. Hongping Zhao

In Condensed Matter Physics

1. Hongping Zhao
2. Nelson Tansu
3. Guangyu Liu
4. Jing Zhang
5. Y. Ee
6. Xiao-Hang Li
7. H. Tong
8. R. Arif

In Mechanics of Materials

1. Hongping Zhao
2. Nelson Tansu
3. Guangyu Liu
4. Jing Zhang
5. Y. Ee
6. R. Arif

Citations in the corpus

• III-Nitride Photonics (2010, background): “Based on the comprehensive modeling of staggered InGaN QW, it is expected that the use of this active region will potentially result in internal quantum efficiency in the range of 50% for green-emitting devices [10].”