400-nm InGaN-GaN and InGaN-AlGaN multiquantum well light-emitting diodes

By Shoou Jinn Chang, C. Kuo, Yan Kuin Su, L. W. Wu, J. Sheu, T. Wen, W. Lai, J. R. Chen, J. Tsai. 2002

223 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials

View Paper: https://www.semanticscholar.org/paper/6137ff12a6176580da20e4554b236b7387a3def0

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In Condensed Matter Physics

1. Hongping Zhao
2. Nelson Tansu
3. R. Arif
4. Y. Ee
5. Guangyu Liu
6. Jing Zhang

In Electrical and Electronic Engineering

1. Hongping Zhao
2. R. Arif
3. Shoou Jinn Chang
4. Nelson Tansu
5. Y. Ee

In Electronic, Optical and Magnetic Materials

1. Hongping Zhao
2. Nelson Tansu
3. R. Arif
4. Y. Ee
5. Shoou Jinn Chang

Citations in the corpus

• White-light emission from near UV InGaN-GaN LED chip precoated with blue/green/red phosphors (2003, methodology): “These -UV LED chips exhibited an EL peak wavelength at around 400 nm. Detailed results of the -UV In Ga N‐Al Ga N LED chip itself will be reported elsewhere [ 11 ].”
• Self-Consistent Analysis of Strain-Compensated InGaN–AlGaN Quantum Wells for Lasers and Light-Emitting Diodes (2009, background): “photoluminescence and radiative efficiency of 400-nm emitting LEDs by 2-times [17].”