On the efficiency droop in InGaN multiple quantum well blue light emitting diodes and its reduction with p-doped quantum well barriers

By Jinqiao Xie, X. Ni, Q. Fan, R. Shimada, Ü. Özgür, Hadis Morkoç. 2008

319 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Condensed Matter Physics, Mechanics of Materials

View Paper: https://www.semanticscholar.org/paper/7caaaa7156497838d0e244a2a3fabb72721cb40b

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

1. Nelson Tansu
2. Hongping Zhao
3. Jing Zhang
4. Guangyu Liu
5. R. Arif
6. M. Crawford

In Condensed Matter Physics

1. Nelson Tansu
2. Hongping Zhao
3. Guangyu Liu
4. R. Arif
5. Jing Zhang
6. M. Crawford
7. Y. Ee

In Mechanics of Materials

1. Hongping Zhao
2. Nelson Tansu
3. Guangyu Liu
4. R. Arif
5. Jing Zhang
6. M. Crawford
7. Y. Ee

Citations in the corpus

• LEDs for Solid-State Lighting: Performance Challenges and Recent Advances (2009, background): “measurements [59], [63], with opposing conclusions, and consensus on the carrier densities achieved in these measurements is needed.”
• Analysis of Internal Quantum Efficiency and Current Injection Efficiency in III-Nitride Light-Emitting Diodes (2013, background): “Various possible explanations were proposed as the mechanism for the efficiency droop in high power nitride LEDs as follows: 1) decreased carrier localization at In-rich regions at high injection densities [1]; 2) carrier leakage [17]–[23]; 3) hole transport impediment and consequent electron leakag”