Improved light-output and electrical performance of InGaN-based light-emitting diode by microroughening of the p-GaN surface
By C. Huh, Kug‐Seung Lee, Eun-jeong Kang, Seong-Ju Park. 2003
355 citations recorded by the source corpus.
Subfields: Condensed Matter Physics, Electrical and Electronic Engineering, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/df9bddf483c98a900139b3580e50c1e27ab72dae
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In Condensed Matter Physics
In Electrical and Electronic Engineering
In Materials Chemistry
Citations in the corpus
- Light Extraction Efficiency and Radiation Patterns of III-Nitride Light-Emitting Diodes With Colloidal Microlens Arrays With Various Aspect Ratios (2011, methodology): “Various approaches have been used to enhance the light extraction efficiency for III-nitride LEDs, such as surface roughening [31]–[34], sapphire microlenses [35], oblique mesa sidewalls [36], nanopyramids [37], photonic crystals [38]–[41],”
- III-Nitride Ultraviolet Emitters: Technology and Applications (2015, background): “1 a Phase diagram at 1 bar (with N2 fugacities, after [60], and the region for AlN growth) and b partial pressure of vapor species under stoichiometric sublimation in the Al–N2 system with Al partial pressure over liquid Al (after [7]) 2 Growth and Properties of Bulk AlN Substrates 29”
- Optimization of Light Extraction Efficiency of III-Nitride LEDs With Self-Assembled Colloidal-Based Microlenses (2009, methodology): “This has been done using wet etching [5]”