Spontaneous Emission and Characteristics of Staggered InGaN Quantum-Well Light-Emitting Diodes

By R. Arif, Hongping Zhao, Y. Ee, Nelson Tansu. IEEE Journal of Quantum Electronics, 2008

141 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Materials Chemistry, Mechanics of Materials

View Paper: https://www.semanticscholar.org/paper/c8aaac79b8056b48892f90789cee5fe01de02be1

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Condensed Matter Physics

1. Hongping Zhao
2. Nelson Tansu
3. R. Arif
4. Y. Ee
5. Guangyu Liu
6. Jing Zhang

In Materials Chemistry

1. Nelson Tansu
2. Hongping Zhao

In Mechanics of Materials

1. Hongping Zhao
2. Nelson Tansu
3. R. Arif
4. Y. Ee
5. Guangyu Liu
6. Jing Zhang

Citations in the corpus

• Self-Consistent Analysis of Strain-Compensated InGaN–AlGaN Quantum Wells for Lasers and Light-Emitting Diodes (2009, methodology): “separation effect in InGaN QW active region, as follow 1) nonpolar InGaN QW growth [6]; 2) the use of -AlGaN layer in InGaN QW [7], [8]; 3) staggered InGaN QW [9], [10]; and 4) type-II InGaN–GaNAs QW [11].”
• Design Analysis of Staggered InGaN Quantum Wells Light-Emitting Diodes at 500–540 nm (2009, unknown): “nitride-based LED device structures [1]–[3], [9], [10].”