Guangyu Liu
Condensed Matter Physics · 2009–2013
A researcher in the Science corpus: 6 papers; trusts 6 researchers and is trusted by 4 researchers here, as inferred from the citation graph.
Subfields
- Condensed Matter Physics — 100 citations into it; #858 of 1,948 by trust here, #840 by citations
- Atomic and Molecular Physics, and Optics — 71 citations into it; #3,368 of 7,135 by trust here, #3,995 by citations
- Mechanics of Materials — 28 citations into it
- Biomedical Engineering — 16 citations into it; #9,874 of 10,734 by trust here, #8,749 by citations
Whom Guangyu Liu trusts overall
Their strongest outbound trust, strongest first, inferred from their citations.
Who trusts Guangyu Liu overall
Papers from Guangyu Liu's perspective
Ordered by how strongly the researchers Guangyu Liu trusts endorse each paper. Same corpus, a different order for every researcher.
- On the importance of radiative and Auger losses in GaN-based quantum wells
- Auger recombination rates in nitrides from first principles
- Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting (Journal of Display Technology)
- On the efficiency droop in InGaN multiple quantum well blue light emitting diodes and its reduction with p-doped quantum well barriers
- Analysis of InGaN-delta-InN quantum wells for light-emitting diodes
- Analytic model for the efficiency droop in semiconductors with asymmetric carrier-transport properties based on drift-induced reduction of injection efficiency
- Optimization of Light Extraction Efficiency of III-Nitride LEDs With Self-Assembled Colloidal-Based Microlenses (IEEE Journal of Selected Topics in Quantum Electronics)
- Surface-plasmon-enhanced light emitters based on InGaN quantum wells (Nature Materials)
- Design and characterization of GaN∕InGaN solar cells
- Metalorganic Vapor Phase Epitaxy of III-Nitride Light-Emitting Diodes on Nanopatterned AGOG Sapphire Substrate by Abbreviated Growth Mode (IEEE Journal of Selected Topics in Quantum Electronics)
Their papers
- Analysis of InGaN-delta-InN quantum wells for light-emitting diodes (2010) — 171 citations
- Current injection efficiency induced efficiency-droop in InGaN quantum well light-emitting diodes (2010) — 207 citations
- Analysis of Internal Quantum Efficiency and Current Injection Efficiency in III-Nitride Light-Emitting Diodes (2013) — 188 citations
- Efficiency-Droop Suppression by Using Large-Bandgap AlGaInN Thin Barrier Layers in InGaN Quantum-Well Light-Emitting Diodes (2013) — 150 citations
- III-Nitride Photonics (2010) — 166 citations
- Growths of staggered InGaN quantum wells light-emitting diodes emitting at 520–525 nm employing graded growth-temperature profile (2009) — 170 citations