Gregg H. Jessen
Electronic, Optical and Magnetic Materials · 2001–2018
A researcher in the Science corpus: 10 papers; trusts 5 researchers and is trusted by 0 researchers here, as inferred from the citation graph.
Subfields
- Electronic, Optical and Magnetic Materials — 143 citations into it
- Materials Chemistry — 126 citations into it
Whom Gregg H. Jessen trusts
Their strongest outbound trust, strongest first, inferred from their citations.
- Akito Kuramata (in Electronic, Optical and Magnetic Materials)
- Shigenobu Yamakoshi (in Electronic, Optical and Magnetic Materials)
- Masataka Higashiwaki (in Electronic, Optical and Magnetic Materials)
- Kohei Sasaki (in Electronic, Optical and Magnetic Materials)
- T. Masui (in Electronic, Optical and Magnetic Materials)
Papers from Gregg H. Jessen's perspective
Ordered by how strongly the researchers Gregg H. Jessen trusts endorse each paper. Same corpus, a different order for every researcher.
- 3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped $\beta $ -Ga2O3 MOSFETs (IEEE Electron Device Letters)
- High-power AlGaN/GaN HEMTs for Ka-band applications (IEEE Electron Device Letters)
- AlGaN/GaN high electron mobility transistors with InGaN back-barriers (IEEE Electron Device Letters)
- Device-Quality β-Ga2O3 Epitaxial Films Fabricated by Ozone Molecular Beam Epitaxy
- Valence band ordering in β-Ga2O3 studied by polarized transmittance and reflectance spectroscopy
- 30-W/mm GaN HEMTs by field plate optimization (IEEE Electron Device Letters)
- 10-W/mm AlGaN-GaN HFET with a field modulating plate (IEEE Electron Device Letters)
- AlGaN/AlN/GaN high-power microwave HEMT (IEEE Electron Device Letters)
- AlGaN/GaN HEMTs-an overview of device operation and applications (Proceedings of the IEEE)
- High-voltage field effect transistors with wide-bandgap β-Ga2O3 nanomembranes
Their papers
- 3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped $\beta $ -Ga2O3 MOSFETs (2016) — 427 citations
- Enhancement-mode Ga2O3 wrap-gate fin field-effect transistors on native (100) β-Ga2O3 substrate with high breakdown voltage (2016) — 318 citations
- $\beta$ -Ga2O3 MOSFETs for Radio Frequency Operation (2017) — 214 citations
- Observation of 4H–SiC to 3C–SiC polytypic transformation during oxidation (2001) — 152 citations
- Demonstration of high mobility and quantum transport in modulation-doped β-(AlxGa1-x)2O3/Ga2O3 heterostructures (2018) — 292 citations
- Guest Editorial: The dawn of gallium oxide microelectronics (2018) — 597 citations
- Donors and deep acceptors in β-Ga2O3 (2018) — 247 citations
- Highly conductive homoepitaxial Si-doped Ga2O3 films on (010) β-Ga2O3 by pulsed laser deposition (2017) — 160 citations
- Short-Channel Effect Limitations on High-Frequency Operation of AlGaN/GaN HEMTs for T-Gate Devices (2007) — 332 citations
- Dominant effect of near-interface native point defects on ZnO Schottky barriers (2007) — 155 citations