Demonstration of high mobility and quantum transport in modulation-doped β-(AlxGa1-x)2O3/Ga2O3 heterostructures

By Yuewei Zhang, A. Neal, Zhanbo Xia, C. Joishi, Jared M. Johnson, Yuanhua Zheng, S. Bajaj, M. Brenner, D. Dorsey, K. Chabak and 5 more. 2018

292 citations recorded by the source corpus.

Subfields: Electronic, Optical and Magnetic Materials, Materials Chemistry, Renewable Energy, Sustainability and the Environment

View Paper: https://www.semanticscholar.org/paper/8f4ec5d1ddd35b18575d904c909e595f243dc9bf

Citations in the corpus

• Progress of Ultra-Wide Bandgap Ga2O3 Semiconductor Materials in Power MOSFETs (2020, unknown): “β-(AlxGa1-x)2O3/β-Ga2O3 interface [235], [236].”