Observation of 4H–SiC to 3C–SiC polytypic transformation during oxidation

By Robert S. Okojiea, P. Pirouz, S. Tumakha, Gregg H. Jessen, L. Brillson. 2001

152 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/31478c9e897ee33b579e3066aeb545a3a27ee64c

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In Electrical and Electronic Engineering

1. Volker Presser
2. K. Nickel

Citations in the corpus

• Silica on Silicon Carbide (2008, background): “45 This phenomenon was observed to occur in highly n -type 4H-SiC at 1150°C under oxidizing conditions, 151 in the case of H 2 etching at higher temperatures (1575°C) 152 or under vacuum conditions at ∼ 1800°–2000°C in 6H-SiC:N samples with high nitrogen doping levels and excess silic”