Short-Channel Effect Limitations on High-Frequency Operation of AlGaN/GaN HEMTs for T-Gate Devices

By Gregg H. Jessen, R. Fitch, J. Gillespie, G. Via, A. Crespo, D. Langley, D. Denninghoff, M. Trejo, E. Heller. IEEE Transactions on Electron Devices, 2007

332 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials

View Paper: https://www.semanticscholar.org/paper/223c94fbe491c796d85f79b0e83e73467a272ade

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Citations in the corpus

• Scaling of GaN HEMTs and Schottky Diodes for Submillimeter-Wave MMIC Applications (2013, background): “The short-channel effect is characterized by the channel aspect ratio (Lg /d , d: gateto-channel distance), and Lg /d ≥ 5 is typically required to prevent a severe Vth shift [20], [21].”