Ulrich Böttger
Electrical and Electronic Engineering · 2000–2016
A researcher in the Science corpus: 15 papers; trusts 3 researchers and is trusted by 12 researchers here, as inferred from the citation graph.
Subfields
- Electrical and Electronic Engineering — 142 citations into it; #2,508 of 16,539 by trust here, #1,531 by citations
- Cellular and Molecular Neuroscience — 27 citations into it; #1,391 of 2,998 by trust here, #1,427 by citations
Whom Ulrich Böttger trusts overall
Their strongest outbound trust, strongest first, inferred from their citations.
Who trusts Ulrich Böttger overall
Papers from Ulrich Böttger's perspective
Ordered by how strongly the researchers Ulrich Böttger trusts endorse each paper. Same corpus, a different order for every researcher.
- ‘Memristive’ switches enable ‘stateful’ logic operations via material implication (Nature)
- Complementary resistive switches for passive nanocrossbar memories. (Nature Materials)
- Electrochemical metallization memories—fundamentals, applications, prospects (Nanotechnology)
- Conductive bridging RAM (CBRAM): an emerging non-volatile memory technology scalable to sub 20nm (IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.)
- Understanding the switching-off mechanism in Ag+ migration based resistively switching model systems
- Nanoionics-based resistive switching memories. (Nature Materials)
- Low current resistive switching in Cu–SiO2 cells
- Study of Multilevel Programming in Programmable Metallization Cell (PMC) Memory (IEEE Transactions on Electron Devices)
- Nanometer-scale switches using copper sulfide
- Self-Accelerated Thermal Dissolution Model for Reset Programming in Unipolar Resistive-Switching Memory (RRAM) Devices (IEEE Transactions on Electron Devices)
Their papers
- Ferroelectricity in hafnium oxide thin films (2011) — 2,377 citations
- Physics of the Switching Kinetics in Resistive Memories (2015) — 262 citations
- Origin of the Ultra‐nonlinear Switching Kinetics in Oxide‐Based Resistive Switches (2011) — 348 citations
- Simulation of multilevel switching in electrochemical metallization memory cells (2012) — 167 citations
- Phase transitions in ferroelectric silicon doped hafnium oxide (2011) — 336 citations
- Ferroelectricity in Simple Binary ZrO2 and HfO2. (2012) — 1,541 citations
- About the deformation of ferroelectric hystereses (2014) — 177 citations
- Beyond von Neumann—logic operations in passive crossbar arrays alongside memory operations (2012) — 362 citations
- Ferroelectricity in yttrium-doped hafnium oxide (2011) — 622 citations
- Ferroelectric Zr0.5Hf0.5O2 thin films for nonvolatile memory applications (2011) — 489 citations
- Evidence for oxygen vacancies movement during wake-up in ferroelectric hafnium oxide (2016) — 258 citations
- Current status and challenges of ferroelectric memory devices (2005) — 166 citations
- Ferroelectric phase transitions in nanoscale HfO2 films enable giant pyroelectric energy conversion and highly efficient supercapacitors (2015) — 203 citations
- Chemical solution deposition of ferroelectric yttrium-doped hafnium oxide films on platinum electrodes (2014) — 150 citations
- Differentiating 180° and 90° switching of ferroelectric domains with three-dimensional piezoresponse force microscopy (2000) — 157 citations