Simulation of multilevel switching in electrochemical metallization memory cells

By Stephan Menzel, Ulrich Böttger, Rainer Waser. 2012

167 citations recorded by the source corpus.

Subfields: Cellular and Molecular Neuroscience, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/1f821320080767ef726fa74f39f579090a94ac57

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Cellular and Molecular Neuroscience

1. Ilia Valov
2. Daniele Ielmini
3. Michael N. Kozicki

In Electrical and Electronic Engineering

1. Ilia Valov
2. Daniele Ielmini
3. Michael N. Kozicki
4. Rainer Waser
5. H. Philip Wong
6. Shimeng Yu
7. Razali Ismail
8. Ee Wah Lim

Citations in the corpus

• Resistive switching memories based on metal oxides: mechanisms, reliability and scaling (2016, methodology): “ches to RRAM analytical modeling were also reported, including variable-gap switching [80], a mixed variable gap/ radius [81], and quantum point conductance [82, 83].”
• Cation-based resistance change memory (2013, methodology): “These were based on kinetic Monte Carlo (KMC) simulations [84] or on differential kinetics equations [85].”