Origin of the Ultra‐nonlinear Switching Kinetics in Oxide‐Based Resistive Switches
By Stephan Menzel, M. Waters, A. Marchewka, Ulrich Böttger, Regina Dittmann, Rainer Waser. 2011
348 citations recorded by the source corpus.
Subfields: Cellular and Molecular Neuroscience, Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/d41c213eeb34d84048050c82a2df378b872fa7f7
How researchers see this paper
The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.
In Cellular and Molecular Neuroscience
In Electrical and Electronic Engineering
- Daniele Ielmini
- Federico Nardi
- David C. Gilmer
- Simone Balatti
- S. Larentis
- Razali Ismail
- Ee Wah Lim
- Rainer Waser
Citations in the corpus
- Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM—Part II: Modeling (2012, methodology): “have used calculations to discriminate between the roles of temperature and field in the set time as a function of voltage in oxide-based RRAM [18].”
- Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM—Part I: Experimental Study (2012, background): “because excess Hf and oxygen vacancies may act as dopants [17] or cause a defect band in HfO2 [9], [27].”
- Conduction Mechanism of Valence Change Resistive Switching Memory: A Survey (2015, methodology): “model [93], domain-based model [94,95], drift-diffusion model [96], ion-transport-recombination model [97–99] and hourglass model [100,101] are deliberately omitted in this article.”