Ferroelectric Zr0.5Hf0.5O2 thin films for nonvolatile memory applications

By Johannes Müller, T. Böscke, D. Bräuhaus, U. Schröder, Ulrich Böttger, J. Sundqvist, P. Kücher, Thomas Mikolajick, L. Frey. 2011

489 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/ba2f7afcf11015cccd094771ea5015a3405788c0

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Robin Materlik
2. Alfred Kersch
3. C. Kunneth

In Materials Chemistry

1. Robin Materlik
2. Alfred Kersch
3. C. Kunneth

Citations in the corpus

• The Origin of Ferroelectricity in Hf$_{x}$ Zr$_{1-x}$ O$_2$: A Computational Investigation and a Surface Energy Model (2015, methodology): “For HZO, only our own calculated values are available as well as experimental data from Müller et al. 11.”