Electrochemical metallization memories—fundamentals, applications, prospects

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Stochastic Memristive Devices for Computing and Neuromorphic Applications (2013, background): “Devices based on resistive switching (memristive devices or memristors (2-6) have been identified as a major contender in applications ranging from nonvolatile memory storage, logic, to neuromorphic systems due to their scalability (7), low power operation (8), and large connectivity offered in a cr”
A novel true random number generator based on a stochastic diffusive memristor (2017, background): “Memristors 14 – 16 , or resistive switching devices, have been proposed and demonstrated for a broad spectrum of applications 16 – 19 because of their attractive properties, such as low power consumption 20 , fast switching speed 21 , high endurance 22 , excellent scalability 23 , and…”
A review of emerging non-volatile memory (NVM) technologies and applications (2016, background): “Conductive-Bridge RAM (CBRAM) is a type of RRAM with a reactive electrode that supplies mobile ions ( e.g. , Cu + , Ag + ) to migrate across insulating dielectrics ( a.k.a. solid-state electrolytes) and form metallic ﬁlaments in the on-state [29].”
Neuro-Inspired Computing With Emerging Nonvolatile Memorys (2018, background): “RRAM has two subcategories [44]: one is anion-based oxide random access memory (OxRAM) and the other one is cation-based conductive bridge random access memory (CBRAM) [45].”