Low current resistive switching in Cu–SiO2 cells
By Christina Schindler, M. Weides, Michael N. Kozicki, Rainer Waser. 2008
191 citations recorded by the source corpus.
Subfields: Cellular and Molecular Neuroscience, Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/53fbfa76153aca3029ed861f149ae986eae4f803
How researchers see this paper
The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.
In Cellular and Molecular Neuroscience
- Daniele Ielmini
- Ilia Valov
- Shimeng Yu
- H. Philip Wong
- Michael N. Kozicki
- John R. Jameson
- Duygu Kuzum
- Rainer Waser
In Electrical and Electronic Engineering
- Daniele Ielmini
- Shimeng Yu
- H. Philip Wong
- Ilia Valov
- Michael N. Kozicki
- Rainer Waser
- Duygu Kuzum
- John R. Jameson
Citations in the corpus
- Synaptic electronics: materials, devices and applications (2013, background): “The insulating medium can be chalcogenide [64, 65], oxide [66, 67], amorphous silicon [68], or amorphous carbon [69].”
- Resistive switching memories based on metal oxides: mechanisms, reliability and scaling (2016, background): “V curves of a metal-oxide RRAM device (a) and a CBRAM (b) [60, 65].”
- Cation-based resistance change memory (2013, background): “Extremely low current programming, albeit with very high on-state resistance, has been demonstrated, with an offto-on transition possible in the 10 pA range for Ir/Cu-doped SiO2/Cu structures [101].”
- Electrochemical metallization memories—fundamentals, applications, prospects (2011, methodology): “The data for Ag/Ge–Se are after Schindler et al [55] and the data for Cu/SiO2 are after Schindler et al [56].”