Nanometer-scale switches using copper sulfide

By T. Sakamoto, H. Sunamura, H. Kawaura, Tsuyoshi Hasegawa, T. Nakayama, Masakazu Aono. 2003

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Compact Modeling of Conducting-Bridge Random-Access Memory (CBRAM) (2011, methodology): “The solid-electrolyte materials can be chalcogenides, e.g., Cu2S [8], Ag2S [9], Cu:GeSe [10], and Ag:GeSe [11]; oxides, e.g., SiO2 [12], WO3 [13], and Ta2O5 [14]; nitride, e.g., Si3N4 [15]; carbide, e.g., CuC [16]; or amorphous Si [17], which acts as the resistive switching medium in between the two”
Electrochemical metallization memories—fundamentals, applications, prospects (2011, methodology): “Such failures are especially true when a small RESET bias is applied to the device (i.e., negative AE and grounded or positive CE), as reported for Ag/Gex Sy /W [48], Cu/Ta2O5/Pt [36, 60], and Cu/Cu2S/Ti [41, 58].”
Synaptic electronics: materials, devices and applications (2013, background): “The insulating medium can be chalcogenide [64, 65], oxide [66, 67], amorphous silicon [68], or amorphous carbon [69].”