Complementary resistive switches for passive nanocrossbar memories.

By E. Linn, R. Rosezin, C. Kügeler, Rainer Waser. Nature Materials, 2010

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Beyond von Neumann—logic operations in passive crossbar arrays alongside memory operations (2012, background): “In the third approach, two anti-serially connected bipolar resistive switches, complementary resistive switches (CRS), are incorporated at each cross-point junction [17–22].”
Memristor-based neural networks (2013, background): “Thegrowing interest in memristors has resulted in the development of several concepts for the use of these devices, such as utilizing memristive systems for (reconﬁgurable) logic circuits [16–20], or new computer memory concepts [21–23].”
Electrochemical metallization memories—fundamentals, applications, prospects (2011, methodology): “If the negative potential exceeds Vth,4, element B switches back to HRS ( ) and the resulting state is ‘1’ [79].”
Bipolar Nonlinear $\hbox{Ni/TiO}_{2}\hbox{/}\hbox{Ni}$ Selector for 1S1R Crossbar Array Applications (2011, methodology): “Recently, complementary RS (CRS) using two bipolar RS elements connected in antiseries has been proposed to reduce the sneak current [5]–[7].”