Ilia Valov
Electrical and Electronic Engineering · 2011–2021
A researcher in the Science corpus: 10 papers; trusts 19 researchers and is trusted by 3 researchers here, as inferred from the citation graph.
Subfields
- Electrical and Electronic Engineering — 148 citations into it; #8,055 of 16,539 by trust here, #3,506 by citations
- Cellular and Molecular Neuroscience — 53 citations into it; #2,129 of 2,998 by trust here, #1,719 by citations
- Materials Chemistry — 50 citations into it
- Polymers and Plastics — 27 citations into it
- Biomedical Engineering — 8 citations into it
- Electrochemistry — 8 citations into it; #205 of 378 by trust here, #151 by citations
Whom Ilia Valov trusts overall
Their strongest outbound trust, strongest first, inferred from their citations.
- Rainer Waser
- Shimeng Yu
- Christina Schindler
- Michael N. Kozicki
- Stephan Menzel
- Tsuyoshi Hasegawa
- Masakazu Aono
- J. Maier
- Sangtae Kim
- H. Philip Wong
Who trusts Ilia Valov overall
Papers from Ilia Valov's perspective
Ordered by how strongly the researchers Ilia Valov trusts endorse each paper. Same corpus, a different order for every researcher.
- Nanoionics-based resistive switching memories. (Nature Materials)
- Conductive bridging RAM (CBRAM): an emerging non-volatile memory technology scalable to sub 20nm (IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.)
- Understanding the switching-off mechanism in Ag+ migration based resistively switching model systems
- Study of Multilevel Programming in Programmable Metallization Cell (PMC) Memory (IEEE Transactions on Electron Devices)
- Nanometer-scale switches using copper sulfide
- Low current resistive switching in Cu–SiO2 cells
- Space charge conduction: Simple analytical solutions for ionic and mixed conductors and application to nanocrystalline ceria
- Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges (Advances in Materials)
- Short-term plasticity and long-term potentiation mimicked in single inorganic synapses. (Nature Materials)
- Simulation of multilevel switching in electrochemical metallization memory cells
Their papers
- Electrochemical metallization memories—fundamentals, applications, prospects (2011) — 829 citations
- Recommended Methods to Study Resistive Switching Devices (2018) — 574 citations
- Effects of Moisture on the Switching Characteristics of Oxide‐Based, Gapless‐Type Atomic Switches (2012) — 258 citations
- Redox‐Based Resistive Switching Memories (ReRAMs): Electrochemical Systems at the Atomic Scale (2014) — 168 citations
- Cation-based resistance change memory (2013) — 190 citations
- 2022 roadmap on neuromorphic computing and engineering (2021) — 589 citations
- Coexistence of Grain‐Boundaries‐Assisted Bipolar and Threshold Resistive Switching in Multilayer Hexagonal Boron Nitride (2017) — 285 citations
- Redox Reactions at Cu,Ag/Ta2O5 Interfaces and the Effects of Ta2O5 Film Density on the Forming Process in Atomic Switch Structures (2015) — 156 citations
- Electrochemical dynamics of nanoscale metallic inclusions in dielectrics (2014) — 599 citations
- Electrochemical metallization memories—fundamentals, applications, prospects (2011) — 241 citations